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Power Transistors
2SD2479
Silicon NPN epitaxial planar type Darlington
Unit: mm
For low-frequency amplification
3.80.2
7.50.2
4.50.2
Features
* High forward current transfer ratio hFE * Allowing automatic insertion with radial taping
10.80.2
0.650.1 2.50.1
0.850.1 1.00.1 0.8 C
90
0.8 C
16.01.0
Absolute Maximum Ratings Ta = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 120 100 5 3 2 1.5 150 -55 to +150 Unit V V V A A W C C
0.70.1 0.70.1 1.150.2 1.150.2
0.50.1 0.8 C 1 2 3 2.050.2
0.40.1
2.50.2
2.50.2
1: Emitter 2: Collector 3: Base MT-3-A1 Package
Internal Connection
C B E
200
Electrical Characteristics Ta = 25C 2C
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage DC current gain *1, 2 Collector to emitter saturation voltage *1 Base to emitter saturation voltage Gain bandwidth product Note) *1: Pulse measurement *2: Rank classification Rank hFE Q R S 4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
*1
Symbol ICBO IEBO VCBO VCEO VEBO hFE VCE(sat) VBE(sat) fT
Conditions VCB = 25 V, IE = 0 VEB = 4 V, IC = 0 IC = 100 A, IE = 0 IC = 1 mA, IB = 0 IE = 100 A, IC = 0 VCE = 10 V, IC = 1 A IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA VCB = 10 V, IE = -50 mA, f = 200 MHz
Min
Typ
Max 0.1 1
Unit A A V V V
120 100 5 4 000 40 000 1.5 2 150
V V MHz
Publication date: June 2002
SJD00269AED
1
2SD2479
PC Ta
1.6
IC VCE
4.5 4.0 3.5 3.0 2.5 2.0 1.5 0.2 mA 1.0 Ta = 25C
IC VBE
1.2
IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA
VCE = 10 V 1.0
Collector power dissipation PC (W)
1.4
Collector current IC (A)
Collector current IC (A)
1.2
1.0
Ta = 85C 0.8 25C 0.6 -25C 0.4
0.8 0.6
0.4
0.2
0.2 0 0 20 40 60 80 100 120 140 160
0.5 0 0 2 4 6 8
0.1 mA
0
10 12
0
0.5
1.0
1.5
2.0
2.5
3.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VBE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
10
VCE(sat) IC
100 IC / IB = 1 000 10 000 VCE = 10 V 9 000 8 000 10
hFE IC
Base to emitter saturation voltage VBE(sat) (V)
IC / IB = 1 000
Ta = -25C 25C 1 85C
25C
DC current gain hFE
Ta = 85C
7 000 6 000 5 000 4 000 3 000 2 000
Ta = 85C
25C
1
-25C
-25C
1 000 0.1 1 10 102 103 104 0 1 10 102 103 104
0.1
1
10
102
103
104
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
1 000
Collector output capacitance Cob (pF)
f = 1 MHz Ta = 25C
100
10
0
5
10
15
20
25
30
35 40
Collector to base voltage VCB (V)
2
SJD00269AED
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this book. (4) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 MAY

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